Recently i started to learn 3D NAND in sentaurus TCAD, but there seems to be some problems in GIDL ERASE.

3D NAND uses BTBT for GIDL ERASE.

To implement this, I would like to know what code should be added to the PHYSICS.

i've add

Physics{

Temperature=300

Fermi

Mobility (DopingDependence Enormal HighFieldSaturation)

EffectiveIntrinsicDensity(BandGapNarrowing (OldSlotboom))

Recombination ( SRH(DopingDependence) Auger

Band2Band(Model=Schenk))

}

MOSFET consists of a Tungsten gate, oxide, polysilicon channel, and highly doped Source & Drain.