For undoped 4H-SiC, the electron mobility is typically high. After ion implantation to achieve a doping concentration of 1E16 cm−3 , what electron mobility should be used for resistivity calculations? What is the typical range for low doping mobility and high doping mobility in 4H-SiC?
Any insights on accurate mobility values or resistivity estimation methods for this doping level would be greatly appreciated!
Article Carrier mobility model for simulation of SiC-based electronic devices
Hello,
For 4H-SiC, electron mobility decreases with doping due to impurity scattering. At a doping level of ~1×10¹⁶ cm⁻³ (after implantation/activation), you can expect bulk electron mobility in the range of 800–1000 cm²/V·s at room temperature. For comparison:
- Low doping (≤1×10¹⁵ cm⁻³): ~1000–1200 cm²/V·s.
- Moderate doping (~1×10¹⁶ cm⁻³): ~800–1000 cm²/V·s.
- High doping (≥1×10¹⁸ cm⁻³): ~100–300 cm²/V·s.
For resistivity calculations, you can safely use ~900 cm²/V·s as a practical value at 1×10¹⁶ cm⁻³. For more precise estimates, empirical mobility–doping models such as the Caughey–Thomas relation are widely used.
- Badges
- Science topic
- Similar topics
- Computer Communications (Networks)
- Simulators