This is in relation to ALD processes where thin films are critically monitored for dielectric properties. Any useful ways to understand the effect of composition of these films may have on dielectric constant? What about growth parameters like flow, reaction rates etc?
Modifying the parameters in the ALD deposition of oxides can lead to a different ratio of oxygen, and thus modify the dielectric properties. However this generally leads to low quality oxides and you lose most of the interest of using ALD.
See here for details: Article The influence of growth temperature and precursors' doses on...
Alternatively ALD can be used to incorporate islands or particles of metal. Once again this increases the dielectric constant but it favorizes hopping, tunneling and such when ALD is mostly used as dielectric barrier.
Here is a reference where Pt nano island imbedded by ALD in Al2O3 is used as a transistor canal: Article Single-electron transistor of a single organic molecule with...
Last but not least it is possible to alternate between different oxides with different dielectric properties. The resulting effective dielectric constant will be proportional to the content ratio of oxides. This method can also be used to favorize some tunneling processes instead of others by tuning the geometry of the barrier height.
See for example:Article Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface proper...
In the end lots of materials are available for ALD deposition and the easiest method is probably to find one adequate for your application
As pointed out by Rémi Rafael, the defect structure may change which influences the conducitvity rather than the permittivity, although doping may also be used in-between the layer deposition steps - it probably has been explored.
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