I am working with synthesis of MoS2 material from TMD family, with CVD oven. When using liquid precursor a droplet from pipette dries pretty fast, but the results is very un-homogeneous density of precursor on the wafer?
Anybody has an advice/some tips & tricks/ or general information how to make synthesis environment better and more controllable for the growth of material?
Any links, sources are also appreaciated.
The liquid precursor is very uncontrollable for the growth of 2D materials. You need something to control the gasification process. Horiba has related products.
https://www.horiba.com/us/en/semiconductor/products/new-product-lines/liquid-source-vaporization-system/
Dear Chitengfei,
thank you for the answer and the link. My problem is a bit different. We put our droplet of precursor on wafer with pipette and then dry it on the hot plate, and then we put it in the CVD oven. This drying is fast, but results in a very different density of liquid precursor of the wafer, which I am trying to resolve a bit.
But anyway, thank you for the answer.
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