Dear Scholars,
Given a p-i-n junction under reverse bias and illumination, what is the relation between the recombination rate and the the generation rate according to the SRH recombination theory? Assuming there is no reverse bias and illumination changes, can we say that R and G rates are equal since our system has reached a stationary state?
To be specific, I'm trying to extract the SRH generation rate of a device in the Silvaco Victory TCAD. However, this TCAD software doesn't output the generation rate, it only supplies with recombination rate. how can I overcome this challenge?
In stationary situation I guess one can state Generation = Recombination+Extraction, and Extraction means current going out of the photodiode, note that current may present not only under reverse bias but also under zero or even positive bias like in solar panels.
Nikolay Pavlov, Sir I do appreciate your answer for which has given me insight. Thanks. I had omitted extraction rate for which I could not demonstrate the conservation of charges in the first place.
Aparna Sathya Murthy, Thank you Madame, your answer assisted me a lot. I'm simulating a specific device in Silvaco TCAD, wherein several models can be defined to increase simulation precision. however, in this stage, I have not taken the Auger and Radiative recombination into account since I need to establish an equation between the generation and recombination rates of thermal components alone. The link you attached has helped me to find this equation.
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