Hi,

I would like to simulate a typical polycristalline silicon cell with p-type and n-type layers using a drift diffusion model. I have found a lot of references for intrinsic silicon parameter values in literature. What about parameter values for n-type and p-type layers? Does anyone have any reference so that I can get values for effective density of states of electrons/holes, tail slopes, capture cross section , electron affinity, etc for both n-type and p-type? Or may I consider using values for intrinsic silicon?

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