To obtain the same amount of plasma at the same pressure:
Is RF power needed for (copper bonded sputtering target) is greater or equal to RF Power needed for (unbonded sputtering targets)?
you can see the following links:
1. https://cores.research.asu.edu/sites/default/files/2018-09/Lesker-1-SOP-Rev-D.pdf
2. https://books.google.com/books?id=By2F9FRrm78C&pg=PA2515&lpg=PA2515&dq=RF+power+to+get+plasma+in+copper+bonded+targets&source=bl&ots=8OQyD8-_ss&sig=ACfU3U09pwg_3Cvt5W97_BJ1ErPGFXd1dg&hl=ar&sa=X&ved=2ahUKEwiJhOvNzej0AhUQ3hoKHRSrBUkQ6AF6BAgoEAM#v=onepage&q=RF%20power%20to%20get%20plasma%20in%20copper%20bonded%20targets&f=false
3. https://patents.google.com/patent/US20060169582
4. https://patents.google.com/patent/WO2000030149A1/en
5. https://www.sciencedirect.com/science/article/abs/pii/S1079405099800143
Dear Anchal Kishore Singh
I think these papers will be helpful for you
RF power which will be used to sputter the target should not be directly affected by how the target is held (bonded or unbonded) inside the vacuum chamber. The latter (bonding) will be required for efficient cooling of the target during sputtering; for uniform and controlled sputtering as well as improving life of the target. Inefficient cooling can lead to warping of the target material due to the heat load associated with sputtering process.
Cu like any metal can always be sputtered with DC. The kind of target design (monolithic or bonded on a backing plate or tube) does not matter.
There should not be a (significant) change as even if the Cu target is bonded, its backing plate is typically Cu. So, no change! One might argue if the backing place is different that Cu, there may be some changes. But, experience proves not! Have you seen differences? Please discuss it here.
As some of the previous replies emphasised, there should be no difference in the plasma. Cu backing plate, and Cu bonding to target is basically used for efficient cooling purposes. Without bonding some target materials will simply crack at higher powers. Cu is preferred because of its high thermal conductivity, and will efficiently remove the heat generated during the sputtering process
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