My Question is when the VG is directly applied to gate of mosfet, in CS amp, though vds> vgs-vth is satisfied, the fet is not in saturation region because vgd> vgs-vth. How to decrease the vgd to make my mosfet in saturation region?
PDE value for Tert-Butylamine
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more details about ls_dyna material *Mat_252
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