Hi,
I am working on ZnO based thin films using various dopants like Al, Ga, P, N etc.,Is there any possibility to identify peaks related to these doping elements (which is less than 1 at%) using Raman spectroscopy.
Kindly suggest with literature.
Thanks in advance.
-Amir
Go through this paper. There is some hint of effect of impurities in crystal structure and same is reflected in Raman.
http://www.sciencedirect.com/science/article/pii/S1002007115000817
The doping could affect mainly the position of the raman bands and the shape. New peaks could form if the dopant segregate as a secondary phase.
You have to measure manually. Make a scratch and record the spectrum with a sliding beam passing along it. This is a rather delicate experiment.
Dear Prof. Marcella Bini, Yes your point is correct. Formation of additional peaks illustrates the presence of secondary phases. Thanks for sharing your valuable suggestions.
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