I have a twin magnetron sputtering system and am looking to upgrade my system to include substrate cleaning and biasing.
I have a DC pulsed power supply to apply a bias voltage to my substrate holder. (A 6" diameter metal plate) Would I also be able to generate plasma with this? What would be the most efficient way to enable substrate cleaning capabilities?
In order to do substrate cleaning using the plasma cleaning technique,
1) Firstly your substrate table should be electrically isolated from the chamber. In a way it acts like an electrode, and you can apply power to it. This electrode need not be a magnetron electrode.
2) If you have metallic substrates (electrically conducting substrates), then you can apply dc power to the substrate table, strike the plasma and do the plasma cleaning.
3) But in case you have non conducting substrates like glass/oxidised wafers, then it is preferable to couple rf power to the substrate table. For plasma cleaning you don't need very higher powers, (e.g., on a 6 inch dia) substrate table you will need not more 50 to 100 Watts, Similarly on a 4 inch dia substrate table , you will not need more 25 to 50 watts of rf power.
Substrate cleaning in AR+O2 gas, or pure O2 plasma would be the most beneficial.
K. Sreenivas
Travis,
Also with a pulsed DC-power supply you should be able to do a sputter etch on non-conductive substrates since you decharge the substrate by the pulses. You might need to experiment a bit with the duty cycle to get optimal results. For the rest I concur with the comments made by K. Sreenivas.
K. Sreenivas Sir, can you please clarify that what is the minimum value of DC bias voltage required for plasma cleaning?
The equipment offered to us has bias voltage range of 0-500 V and we are not sure if it will support plasma cleaning or not.
Thanks
- Badges
- Science topic
- Similar topics
- Engineering
- Electrical Engineering
- Electrodes