What are the effects of ion beam irradiation on FET device thin films?
If there is any review article than pls share.
Yanagi, Hisao, and Yasufumi Kawai. "Organic field-effect transistor with narrow channel fabricated using focused ion beam." Japanese journal of applied physics 43, no. 12B (2004): L1575.
Hello Naveen,
there are different interations of ion beams with thin films which have to been discussed:
All effects depend on the energy of the ions and the ion mass.
1) .Rutherford backscattering is an elastic interaction:
The ions interact with the Coulombfield of the film-atoms and are scattered back. Nevertheless, the ions thereby transfer energy to the film atoms. So higher the energy and the ion mass so higher the transfered energy. This leads to effect
2). Destruction of lattice periodicity: The lattice structure is changed. The film atoms are dislocated. Vacancies and defects are generated.
3.) Implantation: Not every ion is backsattered. For deep penetrated ions the energy loss is high and the ions remain within the film. This leads to doping of the film and strong cchange of conductivity. Implantation can be used for doping. In that case, you discusse, important properties of the FET are changed (mobility, doping level).
With Regard
R. Mitdank
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