Hello, I would like to ask the possibility of failure piezo properties performance of AlN thin film deposited by reactive sputtering? I have good ellipsometry, XRD & SEM results but poor piezo- coefficient. The only thing I thought there is 3-4% Oxygen in EDS results. Thanks for advise.
I'm not an expert in the field, but maybe you might want to check out this paper by our piezoelectrics group: Article Surface Morphology and Microstructure of Pulsed DC Magnetron...
As you can see there, the film homogeneity can be tuned much further.
Hello,
some more informations would be required to get some explanations (kind of substrate, technique used for piezo measurements...), but maybe you could have some answers here
Article Sputtering of (001) AlN thin films: Control of polarity by a...
or here
Article Influence of sputtering pressure on polarity distribution of...
Dear Christophe, the substrate is Pt/Ti/Si, technique is reactive sputtering technique using Al target and N2 as a reactive gas and Ar is using to make plasma. The piezo technique is using piezo meter device measures d33 value.
Dear Saeedeh,
maybe you should try deposit some films with higher and lower pressure and make some piezo measurements (see the 2nd article in my 1st answer).
- Badges
- Science method
- Similar topics
- Mathematics
- Statistics
- Statistical Techniques
- Structural Equation Modeling