I am trying to pattern graphene using a laser writer. I have tried various positive and negative resists (NR9, S1800, PMGI) and then subsequent ozone exposure. Once I remove the resist the graphene frequently roles off of the SiO2. How can I prevent this?
I doubt there is a simple answer and you are probably going to have to experiment with a bunch of resists/removers and conditions.
I don't have that much experience with the resists that you mentioned and also the method that you have used. But I have patterned graphene using AZ5214, AZ mir, PMMA with contact and ebeam lithography. You can use all of them for patterning.
To improve the adhesion between graphene and SiO2 bake your samples for 15 min at the temperature of about 180 degree.
How do you remove your resist? with which solvent?
@Tyler Gish Your problem could be that graphene films don't stick to the silicon substrates well. To overcome this, the treatment on the substrates is crucial. These include the way to clean the substrates. Sometimes plasma Asher treatment on the surface of the substrates could be very effective. Further this, you could use some surface agents to treat your substrates. There are many references you could find. Hope it helps.
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Materials Science
- Materials
- Carbon Materials
- Graphite
- Graphene