Hi every one,
I am making very small nano-fabrication patterns over negative photoresist, like 200 nm pitch size. After etching the icon7, the diameter of the holes in the 2D pattern will get larger. I want to keep them small, but as my recipe for plasma etching by ICP, it does not happen. Do you know if I need to increase the flow or any thing else in ICP? I am using 10 Sccm flow for Oxygen and 10 mT pressure.
Thanks
Does your plasma system have a RIE capability?
I'm afraid with ICP only you will always have an isotropic etch condition..
In case RIE is present then just switch to an RIE+ICP or even a pure RIE mode. 10mT pressure is fine for a start, and 10 sccm Oxygen flow can be increased.
If your plasma tool displays the DC Bias value during the etching, try to adjust the process parameters (RIE power, chamber pressure, ICP power) as to have the DC Bias around 100 Volts - for a start.
- Badges
- Science topic