If you know the device epi-layer structure, it is pretty straightforward to built your own model since Schottky is a Metal-Semiconductor Junction. Please, double check with the manufacturer as they might share a basic layer structure with you (i.e. high or low barrier device, GaAs technology or not, etc) if so, there are a few available examples in Silvaco to guide you. No need to worry about the operating frequency (i.e. 5.8GHz in your case) as Schottky diodes can easily have a cut-off frequency beyond 100GHz.
All you need to know is the epi- layer structure and parameters of the diode such as thickness, doping, materials, etc.
It is also better to find a fabricated structure from the literature in order to decide wheather building 2D or 3D structure. In your case I think it is better for you to find data of a fabricated Schottky diode with it DC measurement where you can model the device and correlate the simulated results with the measured ones. Or you can use check with the manufacturer regarding the epi layer of the diode embeded in the ADS.