I am working on Gate-All-Around Silicon nanoscale device, I am getting drain ON current 1.2e-4 for the parameter values of Lg=12nm, W=10nm, Tsi=5nm nano-sheet geometry. I want to improve device ON current towards e-0 or e-1.

Can anyone suggest on what parameter drain current depends, and what physics we need to define in device simulation on Sentaurus TCAD.

Herewith I mentioned the physics section:

Physics(MaterialInterface = "Silicon/Aluminum") {DistrThermalResist =1e-5}

Physics(Material="Silicon") {

Fermi

eQuantumPotential

hQuantumPotential

Mobility( DopingDep Enormal PhuMob HighfieldSat)

Recombination(SRH(DopingDependence) Auger)

}

Physics{Hydrodynamic(eTemperature)}

Physics { Mobility ( HighfieldSaturation (CarrierTempDriveBasic) ) }

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