I am working on Gate-All-Around Silicon nanoscale device, I am getting drain ON current 1.2e-4 for the parameter values of Lg=12nm, W=10nm, Tsi=5nm nano-sheet geometry. I want to improve device ON current towards e-0 or e-1.
Can anyone suggest on what parameter drain current depends, and what physics we need to define in device simulation on Sentaurus TCAD.
Herewith I mentioned the physics section:
Physics(MaterialInterface = "Silicon/Aluminum") {DistrThermalResist =1e-5}
Physics(Material="Silicon") {
Fermi
eQuantumPotential
hQuantumPotential
Mobility( DopingDep Enormal PhuMob HighfieldSat)
Recombination(SRH(DopingDependence) Auger)
}
Physics{Hydrodynamic(eTemperature)}
Physics { Mobility ( HighfieldSaturation (CarrierTempDriveBasic) ) }