u can plot the effective mobility and inversion charge density along the channel.

By extracting this u can also plot both of these using excel or origin......

Dear Subir,

The effective mobility is already modeled as a function of doping, VGS and the electric field along the channel. you can calculate it for a given VGS and VDS. At the same time you can calculate the inversion charge by integrating the inversion charge along the channel. 

For more details please refer to the very useful paper in the link:https://people.rit.edu/lffeee/SPICE.pdf

I will come again to the answer of this interesting question. 

 Dear Subir,

following my answer above. to get the effective mobility by simulation, on the other side, you bias the transistor at certain value of  VDS and VGS such that the transistor operates in the liner region. Then you calculate the transistor drain current. 

After that you can calculate the effective motility by applying the I-V relation:

mueff == ID/ ( W. Cox/L) ( VGS-Vt) VDS, all parameters are known and have their usual meaning.

One can get the inversion charge Qinv at this same operating condition as an output of the simulator or by integrating the inversion charge along the channel.

To get a curve one needs only to vary VGS keeping mind one has to operate the transistor in the linear region.

Then one can increase VDS in steps an get  other curves for the effective mobility at the different values of the VDS.

As a check the values you get for the effective mobility must agree with that of the mobility model used for simulation.

wish you success

Thank you sir

Hello Subir,

I have the same doubt. Did your problem get solved? If yes, please tell me how. Did you use probe statements?

Best wishes,

Shruti.