Dear Arivazhagan,

welcome,

The I-v characteristics are obtained by scanning the independent parameter in a slow rate such that the characteristics could be termed DC characteristics. To be specific for a field effect transistor

ID= f( VGS, VDS),

The procedure is that one keeps VDS a constant value say VDS1 and vary VGS in small steps to get one transistor curve.To get the other transistor curves one repeats for other values of VDSn until the whole I-V field of operation is covered. In every point you get the steady state solution by the simulator. The dynamic performance of the device is very different fro the static characteristics of the device. Also, the small signal behavior is different from the two where one biases the transistor at specific DC point by applying DC voltages and the ac voltage and current is a small perturbation around the operating point.

For the concepts of DC, AD and DC analysis of a device please see the link: Book Electronic Devices

Best wishes

thank you sir. I will go through your book "Electronic Devices"

Hello,

Have you solved this problems?If yes,Could you please suggest me how to do it?

Thanks & Regards

any one did pulsed iv characteristics in sentaurus tcad for trap capturing and trap emission