I would like to use graphene film as a substrate material lying on SiO2/Si. For predicting the growth mode, I would need to know the width of atomically flat terrace. As it is known, the substrate often consists of array of atomically flat terraces and steps.
Hello,
Actually, what is now so far is that the interbonding length is 0.35 nm which can be measure when you have multiple layer graphene with diferent terrace thickness. If you do
AFM on this sample you will find that the thickness between 1 layer and 2 layer graphene is fairly accurate 0.35 nm ~ 0.4 nm.
But, if you just have 1 single laye graphene on top of SiO2/Si. It depends if you are running the AFM in contact mode or Tapping mode. In tapping mode has been reported 0.8 nm and above (http://www.nature.com.libaccess.lib.mcmaster.ca/nmat/journal/v6/n3/full/nmat1849.html) and in contact mode the thickness measurement has been reduced.
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