if you meant dopant concentration in semiconductor you probably going to use Mott-Schottky equation (if you google it, you will find a lot about it). it is the oldest and most reliable method but sometimes tricky. in addition, in combination with other methods is a very informative technique. However, if you have doped your sample with a known foreign-element and you want determine its concentration, on top of my head, you can use ICP. It is a destructive technique. it requires the compound to be completely soluble in any solvent (for metal oxide usually Nitric acid would work).
I agree with Hamed Hajibabaei about using Mott-Schottky plot (capacitance vs. potential). You need a potentiostat to measure it. you can find the theory of using Mott-Schottky plot to determine doping density in this book:
Morrison, S. R., Electrochemistry at semiconductor and metal oxide electrodes, Plenum Press, 1980.
I only know this book, other books may have as well but I do not know. If you need I can scan and send this section of the book for you.
I remember AUTOLAB (Ecochimie.nl) have a Mott-Schottky plot in its manual.
As mentioned before, if you're looking for the chemical composition of the material there are several approaches to consider. In order to recommend one, some knowledge about your material system and rough estimate of the dopant concentration are needed.
If you are looking for the concentration of the electrically active dopants, you can try to measure the carrier concentration by transport measurements such as Hall.