We know that, when lattice periodicity is broken by a defect, the defect bands evolve. Also we know that the parameters such as point defects (vacancies, interstitial), sp3 related point defects such as C-Hx bonding, edge defects, layer thickness, presence disorder (small amount of amorphous carbon), strain, grain boundaries, doping, etc play a major role in Defect band’s (D, D, D, 2D, D+D and D+D ) - intensity, position, and FWHM. Suppose we have a system which has different type of defects simultaneously (like in the case of vertically oriented graphene grown by PECVD).
Can we quantify the contribution from different sources individually and their correlation with each other? Looking for more insight into defect analysis, on disordered graphene nanostructures.
Theoretically, yes we can quantify individual contributions.. for this you need to prepare sample with 'specific' defects...
But in most real life cases(except may be in scotch tape method), graphene prepared by CVD or chemically derived from graphite, there are bouquet of defects.
Read these papers by Dresselhaus:
https://www.physics.purdue.edu/quantum/files/CarbonNano/DresselhausRamanReview.pdf
http://aae490.wikispaces.com/file/view/pr.Raman+spectroscopy+in+graphene.pdf
And there are many more interesting papers by these authors..
Dr Sridhar Vadahanambi, thanks for your information. Alot of litratures available on the defect analysis of carbon materials by different groups (eg Prof Ferrari, Prof Casiraghi, Venezuelaet al; etc). However, Raman spectroscopy of vertically oriented graphene nanosheets (grown by PECVD) seems to be more complicated due to several parameters such as different layer numbers, ion induced defects under plasma, presence of CHx radicals, large amount of edges etc. Under such conditions, how deos one interpret Raman spectrum to account the contribution from various defects?
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