How can I find the exact doping concentration in a chemically synthesized material? As there is no possible reaction which produces the same doping concentration of initially added ratio in a reaction. XRD results showed no presence of addition impurity peak, which affirmed the successful doping. then, I have carried out EDS. EDS was showing the presence of both atoms (Parent and dopant). Now I am trying to find the exact doping ratio.
Dear Muhammad Usman ,
Auger electron spectroscopy (AES) and SAM are electron beam techniques that are used to make chemical analysis at the surface of the materials.
It can be used also in depth profiling in conjunction with Ar+ ion milling.
For more details please see the link:
https://www.nffa.eu/offer/characterisation/installation-5/aes-sam/#:~:text=Secondary%20electron%20microscopy%20(SEM)%20is,and%20selecting%20specific%20Auger%20peaks.
May be a more simple method is to measure the electrical activity of the material if the doping changes the carrier concentration in the material.
So, one can calibrate the conductivity to measure the doping concentration.
Also the energy gap can be an indicator of the doping concentration specially in cased of heavy doping.
Best wishes
Dear Muhammad Usman;
I think this reference clarifies how to determine doping concentration.
https://www.sciencedirect.com/topics/computer-science/doping-concentration.
Dear Muhammad, what is the doping concentration you are discussing or aiming? If it is in the atomic-% range (say from 0.1 to some few at. %), then EDX (EDS) can be quantitative, for lower doping levels things become more difficult. The detection limit of EDX is of the order of 0.01 at.% ...
EDAX results are comparatively crude. If you compare EDAX results from different portions in your sample, you'll find vast fluctuations.
The more powerful tools are:
1. XPS (It can give you the exact stoichiometry and chemical/oxidation states of the ions as well; but it is highly sensitive to surface),
2. Rietveld refinement of XRD data. This is the finest technique to analyze bulk stoichiometry for doped or even multiphase materials.
Thank you dear Mahmood H. M. for suggesting the article. This article is informative.
Thanks, dear Dirk Luetzenkirchen-Hecht for providing prestigious information.
Thanks, dear Souvik Bhattacharjee for sharing information suggestion.
Dear Muhammad Usman ,
Auger electron spectroscopy (AES) and SAM are electron beam techniques that are used to make chemical analysis at the surface of the materials.
It can be used also in depth profiling in conjunction with Ar+ ion milling.
For more details please see the link:
https://www.nffa.eu/offer/characterisation/installation-5/aes-sam/#:~:text=Secondary%20electron%20microscopy%20(SEM)%20is,and%20selecting%20specific%20Auger%20peaks.
May be a more simple method is to measure the electrical activity of the material if the doping changes the carrier concentration in the material.
So, one can calibrate the conductivity to measure the doping concentration.
Also the energy gap can be an indicator of the doping concentration specially in cased of heavy doping.
Best wishes
- Badges
- Science method
- Similar topics
- Methodology
- Crystallography
- X-ray Diffraction