one considersation is energy level mismatch
another is diffusion
are there any other considerations do i need to take
Did you try I-V characteristic. Can you see this publication may help you
(Volume 612, 5 November 2014, Pages 418–424)
for {Injecting electrode controlled electronic transport across Fe3O4 film-Si interfacial structure}
Surajit Ghosh, Neelabh Srivastava, P.C. Srivastava
Best regard
The interface is an atomic plane; it will hardly offer any resistance to an electron motion perpendicular to this plane! But, there is inevitably a Schottky barrier at any semiconductor/electrode region. The Schottky barrier is not characterised by a resistance, but, by a barrier height. The Schottky barrier height can de extracted from the I-V, and/or C-V, and/or internal photo-emission characteristics.
The Schottky barrier is a junction and has the diode characteristics.
transparant means ability of electrons to go through barrier .
or is there any meaning
As has already been said, there are linear and non-linear parts associated with the I-V of the diode (assuming that the current is homogeneous - which is another story).
Whether there is a 'contact resistance' component depends on the technology used to make the diode. Often there is a thin native oxide layer between metal and s/c and this will present probably insignificant 'resistance' as it is so thin that charge easily tunnels through. Such a layer however, will influence the barrier height associated with the exponential part of the transport (the non-linear bit).
Most of the series-R (easily extracted form an I-V plot), is due to the bulk semiconductor and back ohmic contact - which will also have a well-defined 'contact resistance.'
Plenty of good text books to describe what's happening including those by Rhoderick or Sze. The inhomogeneous effects are described thoroughly by RT Tung's papers.
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