Someone has worked with Si3N4 thin films deposited by Pulsed Laser Deposition(PLD) to give me some informations and/or references? I've tried many times in different conditions/parameters (like temperature, atm. pressure, frequency and laser energy), but nothing has shown crystalline orientation under STO, Sapphire or Si substrates. Also, the hard material like this has been actually poorly ablated with KrF laser at least 180 mJ with 10 Hz. Any comments or suggestions, I'll be thankful.
first of all thorougly go through literature publised on your sample.While choosing the substrate, choose the substrate which is having lattice parameters close to your sample.You said you are using 180 mJ. Try to deposit at some what higher laser energies such as 200 mJ and also check target to substrate distance, substrate temperature and increase your deposition time in addition to monitoring OPP, which plays an vital role in thin film deposition
Hi guys! Thank you for your suggestions
I've tried a big range of parameters, such as the substrate temperature, the laser energy, frequency, atmosphere (Oxygen and Nitrogen) different kind of substrates and orientations (the sapphire 0001 should be the best one for it). I don't have access to the laser system higher than 200 mJ, this is a big barrier for try other conditions right now. Also, I've used at least 850 degrees Celsius, cause this is the maximum to my heater.
I'll keep going to other conditions, but always the amorphous phase has achieved.
If someone else has been successful with this kind of material by PLD, please, let me know.