we made a backgate Graphene Field Effect Transistor, and measured the Ugs-Ids curve but our Igs has leaks, any suggestions for this problem or has anyone an idea about where the error could be?
we used 2 needle at the Ti/Au contact for TLM structure, about 5nm/40nm dick,you mean maybe should we use a plate contact so that it wont go through the Ti/Au sheet? the backgate oxide is 285nm SiO2,that should be okay with these Ugs.