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Questions related from Zhuang Miao
as above said,we are trying to use a preformed mask for the Ti/Au contact building on graphen in order to avoid any EBL prozess which cost too much time,but for the measurement we have found that...
07 July 2016 5,770 0 View
as we all knows that passiv sheet can remove or eliminate the effect from air .When comparing with the polymer contamination and metal ion doping ,which of these three could be the dominating factor ?
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so normally we build the graphene FET with SiO2 and Au,how could we calculating that mobility ? thanks for all who have seen this question and if you have any idea plz let me know ,may be with a...
06 June 2016 320 2 View
we made a backgate Graphene Field Effect Transistor, and measured the Ugs-Ids curve but our Igs has leaks, any suggestions for this problem or has anyone an idea about where the error could...
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