The parameters to set are:
- Pressure (in some papers I found little values, 5-15 mTorr, in other papers higher values, around 80 mTorr)
- HF and ICP (in Watts, I guess ICP high and HF very low)
- Gases (it could be enough to use only oxygen?)
- Temperature (using a table temp around 40-50C can improve the etching rate I think)
The system is a reactive ion etching, ICP RIE Oxford.
Thanks in advance for any suggestion,
Cosimo
Dear Cosimo, many thanks for posting this interesting technical question on RG. There are a few relevant articles freely available which might help you in your analysis. For example, please have a look at the following potentially useful link:
Plasma Treatment of Graphene Oxide
https://cdn.intechopen.com/pdfs/61726.pdf
(see attachment)
I also came across an entire PhD thesis devoted to this problem:
Development of Graphene and Graphene- Nanoparticle Composites for Sensor Applications
(also see attached pdf file)
The following relevant research article has been posted by the authors as public full text on RG. Thus you can freely download it as pdf file:
Graphene Etching: How Could It Be Etched?
Article Graphene Etching: How Could It Be Etched?
I hope you will find this information useful. Good luck with wour work and best wishes!
In many works, gases NH3 and N2 are used to treat GO in the nitrogen containing plasma . for nitridation of rGO used NH3 inductively coupled plasma with a power of 10 W at a pressure of 100 mTorr
https://cdn.intechopen.com/pdfs/61726.pdf
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