in simulating the structure, current is increasing with sweeping of draqin voltage but not sweeping with gate voltage. actually a constant current i am getting with sweeping of gate voltage. i think there would be a leakage path. am i right or something else is the problem i am doing.?
Hello Manish,
I have simulated AlGaN/GaN MOSHEMT in Sentaurus TCAD (I-V characteristics) using transient simulations instead of Quasistationary.
I recommend you following the Training of Sentaurus Device (Help -> Training -> Sentaurus Device 16. Special Focus: Simulating AlGaN Devices With Sentaurus Device).
The in built HEMT device is available in Sentaurus TCAD so , first understand the inbuilt HEMT DC and RF things, it gives lot of idea about your simulation.
Hello Adhithan Pon Sir, thank you for your reply. i already simulated the example given in Sentaurus TCAD but when i am simulating the same structure with an oxide layer (i.e. MOS-HEMT with same dimension), drain current is changing w.r.t. drain voltage but not w.r.t. gate voltage. so rsult are not coming properly. so what will be the problm, Sir ?
Dear Manish Verma,
I am not more familiar with this HEMT, but the suggestion is to use basic physics, like instead of using polarisation use fixed charge. (convergence issues also reduced ).
We also face the same problem initially (if I did any small change in inbuilt structure or physics) but after that, I Just remove the high-level physics section. Moreover, the polarisation model is making more problem so ,if possible you can try with the same effect in terms of effective fixed charge.
It may give the proper result to you.!!!!!!
(Just call Adhi)
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