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Questions related from Manish Verma
While simulating the GaN -based trigate HEMT with self-heating effects, i am getting following errors. 1)Finished, because... Solution/update out of range for variable...
06 March 2022 904 2 View
Hello, the buffer in a structure have Acceptor-type traps with concentration of 1e16 (assumed) and energy 0.6eV from Conduction band (assumed).then, if a back-barrier(x
09 September 2021 3,958 1 View
Dear All, in simulating the AlGaN/GaN based MOSHEMT structure, we have to use the surface states concentration/ Surface traps concentration for Fermi level pinning. how to determine the exact...
23 July 2019 3,691 2 View
on simulating a AlGaN/GaN based structure in Sentaurus TCAD, i am getting the following type of error. plz suggest me some solutions regarding to this issue. "Sentaurus Device is unable to...
06 May 2019 577 3 View
in simulating the structure, current is increasing with sweeping of draqin voltage but not sweeping with gate voltage. actually a constant current i am getting with sweeping of gate voltage. i...
11 September 2018 7,541 4 View
Plz give suggestion in regarding of Id-Vds curve not to saturate evnly for 100V. Jus a straight line like structure with approximatly a slope of 45 degree is coming between Id and Vds.
06 June 2018 4,613 3 View
I am studying the different types of the TFET structure with the Sentaurus TCAD. It is worth mentioning that I have studied several papers in this regard and I want to simulate to the both...
18 April 2017 9,069 2 View