I want to measure the electrical properties of an insulating 10-nm-thin film deposited on a bottom electrode. How should I deposit the top electrodes? and are the dimensions of top electrodes important?
Lets assume DC, Dr. Samaras. What would be your suggestion? In addition to this, how can this be possible to measure resistivity lets say in such high resistance?
If you made a Metal -Oxide-Semiconductor structure you could derive a lot of information from both the I vs V and C vs V characteristics.
deposit dielectric onto n-type or p-type Si wafer and then make a metal contact on top (Al or Au). Take (capacitance vs voltage) and (current vs voltage) measurements as a function of temperature using a heated chuck on your wafer prober (if you have one). You will establish lots of parameters.
for dielectric properties vs Temperature e.g. AC measurements then :
form 2 electrical contacts on the bottom (metallic) electrode (the substrate) and at least 2 electrical contacts "on the insulating 10-nm-thin film". Use at least 2 "on thin film" for your actual measurement, but I propose to form some more (furthermore) electrical contacts in order to choose one pair (of correct 2 electrical contacts). NOTE: A correct contact should have no pin holes to bottom (the substrate). Eis measurements will give possibility to have either eq. electr. models or more simple the common I vs V and C vs V characteristics.
as the note in AC measurements, plus 1 or (better) 2 more correct electrical contacts "on the insulating film" in order to verify the (pseudo-) DC measurement to be "the same". In AC measurements you have a theoretical help from the eq. electr. models to verify the (trend to f=>0, i.e. real) DC measurement, since:
the time constant TC (>>10 s) of some highly insulating films may be too high for common DC measurements, as well as the electrical properties may be
erroneously correlated with imperfections of the instruments and cables.
It is common to measure the electrical properties of insulator film ( d ~ 10nm) by making the M-I-M stacks of M-I-S stacks. If you can deposit thinner films, lets say 5nm, then you could use STM( room temperature) to get some idea about the I-V characteristics and can get lot many information about the breakdown characteristics, Random telegraphic noise etc.