I have been following the standard procedure of sonication for 283nm silicon oxide dies in acetone and isopropanol, followed by surface treatment of the die in oxygen plasma. I then use low residue cleaning room tape to exfoliate HOPG graphite from SPI. Despite varying my peeling attempts in the range of 4 to 200 times, I have been dissatisfied with the yield, finding the yield to be too low and the graphene surface area extremely small. For reference, the literature shows graphene areas of roughly 2000 micron squared, but I am getting graphene areas of 200 micron squared. During my literature review, I noticed that the papers I was referencing used natural graphite instead of HOPG. I'm now wondering if this difference in graphite source could be a significant detail affecting graphene yield.