Narendra, yes using Hall measurement one could definitely determine carrier type & density, conductivity, and mobility. In fact repeating the same experiment at different temperatures one could determine the carrier density, mobility as a function of temperature.

In Hall measurement: Hall Coefficient is determined in terms of known parameters such as current (I), hall voltage (VH-measured), magnetic field density (B), sample dimensions (L,W,t).

R = (VH*t*L)/(I*B*W); 

From the calculated Hall Coefficient, one could easily backtrack density, mobility etc. Please do a online research (literature papers/videos) for more detailed understanding of Hall measurement and how Hall coefficient is determined.

Information on Carrier type & density does provide a way to quantify type of doping, doping concentration and impurities etc.

Also based upon carrier mobility information (compared to the reference value) an inference could be drawn on the amount of scattering and type of scattering. Besides, information on mobility could be used for calculating mean free path (lambda) given by:

Lambda = velocity * Tc (Collision time)

tc =(u*m)/q , is the time between carrier collisions, and  velocity (v=uE, mobility*Electric Filed Intensity)

Low Mobility -> low mean free path -> More scattering

Scattering is yet again a combination of many parameters such as Impurities (including dopants), grain size of the sample (if working on thin films), carrier mass etc. For the sake of example consider the following scenario.

If the sample under test has small grain size and many grain boundaries it is obvious that the carrier undergo relatively high scattering. Moreover, grain boundaries (GB) act as carrier traps thus impeding the flow of carrier. There is a wealth of information published and please go through them.

Using Scanning Electron Microscopy (SEM) one could determine average grain size (Micro - Structure) and relate it to scattering effect. Also, heating the sample does have a definite effect on grain size and hence, determining mobility as a function of temperature one could indirectly infer to microlevel structure with regards to grain size and grain boundaries, carrier-impurity scattering etc.

Hope the aforementioned is helpful to you.

-Nirup..

Something else about scattering. The mechanisms of scattering are dependending also on temperature (even if we assume that the change of temperature does not change significantly the microstructure of sample). There are following mechanisms of scattering:

- scattering on phonons (acoustic or optical), which occurs at quite high temperatures,

- scattering on ionized or neutral impurities, which occurs at low temperatures, e.g. 1.4 K.

If you want to investigate the mechanism of scattering in your sample, you schould measure the carriers mobility as a function of temperature (e.g. for the temperature range from 1.4K to 250K) and you may also compare the experimental results with theoretical calculations performed with using a Nextnano program (it is available here: http://www.nextnano.com/index.php).

Best regards,

Adrian.

hall effect measurement gives carrier concentration. using this method can I get the exact quantification of impurities in the semiconductor.