SiC substrate has the off axis tilt angle (3.5 ~ 8.5°) but such detail is not available on SILVACO (Athena / Atlas modes).
The anisotropy parameters are able to define the orientation (0001, 1120, etc), only.
I'm wondering if such tilt is possible, and even such adjustment is not possible, there is a way to perform some etching corrosion in order to obtain the structure with this "tilt", BUT, there will be a considerable difference at IV curves and breakdown voltage analysis???
An change of the surface-index, for which an off-cut is a small-scaled example, affects the surface energy and the work function:
Article Understanding the interplay of surface structure and work fu...
Therefore, all properties which are associated with surface energy or work function will be affected.
Dear Jürgen Weippert, as I'm working specifically with Schottky Diodes SiC-Based, your feedback is highly significant!. Thank you for your help!
- Badges
- Science topic
- Similar topics
- Phytochemistry
- Extracts