Renato Beraldo

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Questions related from Renato Beraldo

How to perform Raman specotroscopy in Nickel silicide thin films?

The laser 532 nm can penetrates around 700 nm depth in the sample, ( in the case, silicon cabide 4H) so then, the nickel silicide films we fabricated have around 150 nm thick. When we perform...

05 December 2023 7,793 2 View

How to calculate TAUN-P0 for Silicon Carbide 4H n and n+ doped?

Using the model for silicon carbide (EX_diode04), there are some values related to the doping concentration, in this case, the TUAN0 and TAUP0. This model presents such values For N-type 1E16,...

26 November 2023 2,115 0 View

Why does SILVACO show exmples with 4H-SiC in 1100 and 1000 direction?

In general, silicon carbide wafers with 4H polytype have 0001 orientation, from bottom to top. This direction is the main direction about current flow in case of a Schottky diode, for example....

20 August 2022 312 1 View

About C-V curves from Schottky Diodes - Parallel or Series ?

What is the difference between Parallel Capacitance and Series Capacitance method ? The most common way is the Series Capacitance, but is possible to perform Parallel capacitance, and in some...

22 May 2022 456 0 View

Why doesnt't Schottky contatc work with more than one metal ??

Hello. I'm trying to measure the rectification behavior with 2 metals, but when two metals are deposited above the semiconductor, the I_V graph does not show a rectification behavior and acts as...

13 December 2021 5,135 5 View

Does the 4° tilt miscut of SiC-4H Substrates really matter in SILVACO ?

SiC substrate has the off axis tilt angle (3.5 ~ 8.5°) but such detail is not available on SILVACO (Athena / Atlas modes). The anisotropy parameters are able to define the orientation (0001,...

01 January 1970 9,142 2 View