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Questions related from Renato Beraldo
Hello! I'm using this kind of mesh parameter for discrete power devices, in 2D modeling. So then, I noticed that the current with a cylindrical mesh device is larger than a device without this...
21 September 2024 3,776 0 View
The laser 532 nm can penetrates around 700 nm depth in the sample, ( in the case, silicon cabide 4H) so then, the nickel silicide films we fabricated have around 150 nm thick. When we perform...
05 December 2023 7,810 2 View
Using the model for silicon carbide (EX_diode04), there are some values related to the doping concentration, in this case, the TUAN0 and TAUP0. This model presents such values For N-type 1E16,...
26 November 2023 2,136 0 View
In general, silicon carbide wafers with 4H polytype have 0001 orientation, from bottom to top. This direction is the main direction about current flow in case of a Schottky diode, for example....
20 August 2022 323 1 View
What is the difference between Parallel Capacitance and Series Capacitance method ? The most common way is the Series Capacitance, but is possible to perform Parallel capacitance, and in some...
22 May 2022 465 0 View
Hello. I'm trying to measure the rectification behavior with 2 metals, but when two metals are deposited above the semiconductor, the I_V graph does not show a rectification behavior and acts as...
13 December 2021 5,146 5 View
SiC substrate has the off axis tilt angle (3.5 ~ 8.5°) but such detail is not available on SILVACO (Athena / Atlas modes). The anisotropy parameters are able to define the orientation (0001,...
01 January 1970 9,153 2 View
