Using the model for silicon carbide (EX_diode04), there are some values related to the doping concentration, in this case, the TUAN0 and TAUP0.
This model presents such values
For N-type 1E16, taun0 = 1E-7 and taup0 = 1E-7
For N-type 5E18, taun0 = 5E-9 and taup0 = 5E-9
The lifetime carrier is dependent of doping concentration and decreases as doping concentration increases. But in the manual and most famous books this equation isn't directly shown. I would like to know how to provide such results, because I have to check silicon carbide with different concentration values.
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