I would like to know how thin metal film on top of CVD graphene/SiO2/Si substrates can be uniformly deposited by e-beam evaporation. Are there any challenges? In fact, such thin metal layer will be used as a hard mask material for patterning my graphene layer. Also, which metal provides a good adhesion with graphene? Please share your experiences.
Although I did not have any experience about the growth of graphene. But it quietly confirm that the growth of the graphene by e-beam is challenge. In general, CVD method is used in a large amount of previous literature. I had been researched some metal substrate with respect to the deposition of graphene. Cu and Ni are commonly used as substrate for providing good adhesion with graphene film. By the way, pre-treatment is definitely needed to acquire well-deposited graphene layer. Maybe excimer laser process you can try to carry out on your experiment. That is all.
Are the metal deposition rate or any other evaporator parameters critical while doing the deposition? For instance, I have evaporated 25 nm chromium @ 0.5 A/sec on top of graphene. Later while doing the resist coating on top of this metal layer, I have observed that the metal layer comes off. Has anyone ever faced similar problem? Thanks,
Regarding metal deposition rate or evaporator parameter I have no idea as above my depiction. However, the adhesion of between Cr/graphene and Cr/resist coating is significant problem I think. A buffer layer between Cr and resist coating is needed to avoid the problem of come off. So far, tungsten is well-adhered with Cr. maybe it is an opportunity. Above suggestions, thanks.
I have similar problems with Cr.I guess it happens due to thermal stresses. I evaporate Cr/Au (3/65nm, rate 0.5/1 A/s), it works. If u need just thick Cr layer reducing rate might help to reduce thermal stresses.
Check it might be helpful
https://www.researchgate.net/post/Why_do_I_observe_damage_to_the_contacts_in_CVD_graphene_contact_fabrication
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