6 Questions 19 Answers 0 Followers
Questions related from Salamat Burzhuev
Hello, I have a problem. My graphene( on top og SiO2 (285nm)/p-Si) FETs are covered by Al2O3 to passivate them from ambient. Than, I use plasma etching for opening back gate where Al203 (Cl2,...
04 April 2016 280 7 View
Hello, I have very high gate leakage currents in graphene field effect transistors. Graphene transistors are covered by Al2O3 (80nm). Graphene is on top of SiO2(285 nm)/p-Si. Al2O3 and SiO2 was...
04 April 2016 3,710 6 View
I use Al2O3 to protect graphene transistors (GFET) from the ambient (H2O/O2). 90nm of Al2O3 was deposited on top of bottom gated GFET at 150 C by using ALD. After, optical microscope inspection...
02 February 2016 458 7 View
Pd considered good contact material with graphene due to low contact resistivity. Usually, Pd/Au is used. However, deposition rates are not discussed in the papers. What is the deposition rate for Pd?
02 February 2016 1,572 2 View
Hello, I use PMMA as a resist for E-beam lithography (EBL) to pattern structures on top of graphene. I remove PMMA by using acetone. However, there is always some thin layers of PMMA left on top...
07 July 2015 5,231 7 View
Hello, Recently, I started to make contacts on top of CVD grown graphene, which we purchase from graphene supermarket. I use E-beam lithography and PMMA as a resist to make a pattern on top of the...
01 January 2015 9,790 11 View