Last week we have fabricated perovskite solar cells having composition FTO/NiOx/CH3NH3PbI3-ZnO/ZnO/Ag. We got Voc = 0.25 V, Isc = 0.5 mA, FF = 62 % and efficiency around 1.4 %. Now question arises is it possible to use ZnO as an ETL onto perovskite-ZnO composite absorber layer while fabricating perovskite solar cell? In which way this composition (CH3NH3PbI3-ZnO/ZnO) will affect overall device performance?
Dear Hassan
would you please display your illuminated and dark I-V curves. What is the thickness of the perovskite layer. I think the inclusion of ZnO will detract the performance of the solar cells since it may lead to high conductive paths in the perovskite layer which is prefered to be an intrinsic i-layer.
It may also render the perovskite layer n-type such that the perovskite structure will be P+n n+ which may have worse performance than the i-layer perovskite.
What i wrote are some theoretical models that need verification.
Best wishes
Dear Hassan
would you please display your illuminated and dark I-V curves. What is the thickness of the perovskite layer. I think the inclusion of ZnO will detract the performance of the solar cells since it may lead to high conductive paths in the perovskite layer which is prefered to be an intrinsic i-layer.
It may also render the perovskite layer n-type such that the perovskite structure will be P+n n+ which may have worse performance than the i-layer perovskite.
What i wrote are some theoretical models that need verification.
Best wishes
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