Dear Carlos,

welcome,

The increase of indium may cause more lattice mismatch between the Ga N substrate and the Inx Ga 1-x N film. This mismatch causes more crystallographic defects acting as recombination centers leading to the decrease of nonradiative recombination lifetime.

This is a qualitative effect. The quantitative effect is a matter of measuring the lifetime as the density of these defects depends on the epitaxail growth condition.

You may find experimental results of the carrier lifetime change with In content by glowing the paper in the link: aip.scitation.org/doi/abs/10.1063/1.1607521

I my self could not access the paper and therefore, its detailed content is not known for me.

Best wishes

Hi, I downloaded the JAP manuscript from teh AIP web site (attached) and checked: you can find the data you are after in figure 9 and could probably extend the plot by also using data from figure 8a, not only 8b. The authors made a number of assumptions and approximations in order ot derive the result, but you can read that yourself. Thomas

Thanks, but it is not the answer. This reference talk about Carrier separation as a function of indium concentration for the x-series.

My interest is to know the time of life as a function of the concentration of Indium in InGaN. Preferably in for a bluk InGaN because it will be useful for modeling solar cells based on InGaN.