During I-V measurement, under illumination of UV light (325 nm) upon p-n ZnO diodes, the value of current increases. Can anyone please help me how to calculate the responsivity of the fabricated photodiodes by using I-V values?
The Responsivity is R= ((Iph-Idark)/Popt) A/W, where Iph is the photocurrent and Idark is the dark current and Popt is the optical power which is exposed on the sensing area. use this formula I think.
Dear Amiruddin,
would you please display your i-v curve in the dark and under illumination.
What is the mode of operation. Do you reverse bias the diode or you use it in photovoltaic mode?
I think structural relaxation process automatically starts when you switch on high intensity U.V light. You can get rid off this unwanted situation by pumping down the light intensity. I mean decrease the light intensity. Because too much U.V photon flux leads to break down the chemical structure that is automatically reveals the structural deterioration. Because of structural material parameters strongly depends on electronical parameters.
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