Hi looking at this just now and hopefully not too late ;).

RIBE is a remote plasma process where the grid voltage and platen tilt in addition to the ability to control plasma parameters internally within chamber make it a versatile process. Not only you have the capability to provide a physical but also a chemical etch pathway. The plasma is not so much affected by the etch by-products as its remote and hence more stable in comparison with the traditional ICP, RIE or CCP processes. CAIBE on the other hand provides/releases a reactive specie like Chlorine close to the gas surface to provide a chemical pathway to the etch process so more or less the same thing like RIBE but I would say with the CAIBE process the chemical etch pathway is probably more efficient as it would more or less see no collisions in reaching to the wafer surface (unlike an RIBE). When it comes to Pros: CAIBE has a stronger chemical etch path way and may be higher etch rates. But then for example Cl based CAIBE processes may be more environmentally hazardous than RIBE processes for example with no Cl. But this is a completely application dependent scenario. when it comes to cons: CAIBE may be has lesser parameters you can play with to tweak the process and may be an RIBE has a bigger parameter set you can play with to tweak the process? Finally just by being more chemical, CAIBE can be a highly selective etch process and may be better and/or preferred from an application perspective.

#etching, #RIBE.