06 November 2018 3 4K Report

I was wondering if LT-GaAs or other III-V materials such as InGaAs/InAlAs that are grown in MBE for Terahertz application can be grown in MOCVD ?

What are the differences? Pros and cons of each method?

Has any one tried growing III-V materials in MOCVD for terahertz application?

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