If possible then can anyone suggest me the experimental conditions for the annealing???
I think annealing in ambient would produce a complete CuO phase...But i need to get Cu2O that is an incomplete oxidation...So I thought vacuum will be needed.. You know Cu2O from sigma will cost a lot...We have enough Cu powder ..so i thought it would be better to get Cu2O by any such method.. thats all..
Anyway ..thank you for the kind reply..
Dear Arindam
Instead of vacuumannealing you should try to oxidize your Cu samples in oxygen environment. A moderate oxygen partial pressure ~5% with a relatively high temperature at 500 oC will give an optimal condition for growing high-quality Cu2O with low density of defects.
I don't get your point mam....what kind of defects are you pointing out?? should i use any other gas like N2 or Ar with oxygen???
Dear Arindam; the one way obtained cuprous oxide by heating in a n oxygen atmosphere in the furnace at very high temperatures:
Polycrystalline cuprous oxide can be formed by thermal oxidation of copper under suitable conditions (Rai, 1988). The procedure involves the oxidation of high purity copper at an elevated temperature (1000–1500C) for times ranging from few hours to few minutes depending on the thickness of the starting material (for total oxidation) and the desired thickness of Cu2O (for partial oxidation). Process is followed by high-temperature annealing for hours or even days.
The results of the oxidation process as deduced from both XRD and SEM studies indicate that the oxide layers resulting from oxidation at 1050C consist entirely of
Cu2O. Those grown below 1040C gave mixed oxides of Cu2O and CuO.
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