Can excess doping produce enough internal electric field in a p-type semiconductor to exhibit Franz-Keldysh effect leading to band tailing?
What could be the nature of such internal electric field? What would be the source of such an internal field?
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Excess (heavy) doping will cause band-tailing and change the band-gap, which may change its optical properties. It will also change the charge carrier concentration. But I do not think excess doping can cause internal electric field.
This article may be useful for you-
Franz-Keldysh and band-filling effects in the electroreflectance of highly doped p-type GaAs
J. M. A. Gilman, A. Hamnett, and R. A. Batchelor
Phys. Rev. B 46, 13363 – Published 15 November 1992
There is no chance to develop an internal electric field in a semiconducting material with homogeneous doping at any level... Nature smears out any local charge inhomogeneity in quite short time, so assuring electrical neutrality in short or large range.
The Franz-Keldysh effect requires the application of an external bias to the semiconductor, and it usually needs a three-digit voltage