Can excess doping produce enough internal electric field in a p-type semiconductor to exhibit Franz-Keldysh effect leading to band tailing?
What could be the nature of such internal electric field? What would be the source of such an internal field?
Excess (heavy) doping will cause band-tailing and change the band-gap, which may change its optical properties. It will also change the charge carrier concentration. But I do not think excess doping can cause internal electric field.
This article may be useful for you-
Franz-Keldysh and band-filling effects in the electroreflectance of highly doped p-type GaAs
J. M. A. Gilman, A. Hamnett, and R. A. Batchelor
Phys. Rev. B 46, 13363 – Published 15 November 1992
DOI: 10.1103/PhysRevB.46.13363
There is no chance to develop an internal electric field in a semiconducting material with homogeneous doping at any level... Nature smears out any local charge inhomogeneity in quite short time, so assuring electrical neutrality in short or large range.
The Franz-Keldysh effect requires the application of an external bias to the semiconductor, and it usually needs a three-digit voltage
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