we want to fabricate Schottky barrier-based Source and Drain in MOSFET without ion implantation and Diffusion because of lack of facilities. For our device, Channel width and length are not a concern, we want to fabricate Simple high channel length devices.
can anyone suggest to me the process flow and any good paper for fabricating simple SBMOSFET?
Dear Bobby Bnm ,
Happy new year!
If you have n-type silicon then you can use metals which have a high work function phi such that the work function of the metal is greater with that of the semicondcutor with with few tenths of an electron volt. In this way one can build rectifying Schottky contact. It is well known that platinum and Gold build good rectifying MS contact with n-Si.
If you have p-type material then you have to choose a metal with lower work function than the p-Si such Ti, Al, Ta, and Ag. such that a potential barrier is formed across the interface leading to the rectifier behavior.
The most important issue is to have a very clean surface of the semiconductor before the metal deposition. Very thin oxide film may enhance the enhance the rectifying contact. Also silicidation can also help to get reproduced Schottky diode.
Best wishes
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