The part of my PhD research is to study the influence of real structure of thin film lithium niobate on kinetics of reactive ion etching.
We use NanoLN lithium niobate on insulator (LNOI) wafers.
Obviously, that SmartCut technology, which used for wafer fabrication, is associated with He-ion irradiation of the structure that leads to formation of structural defects. The high degree of point defects (vacancies and interstitial atoms) cannot be completely eliminated by annealing. There should be dislocation loops formation.
We experimentally revealed (by etch pits methods) that surface dislocation density on LNOI wafers is higher than on bulk LN (CQT wafers).
This affects the etching process in the plasma.
Maybe anybody can share any relevant researches.
Andrei A. Kozlov, here are some references.
- Chen, K., Li, Y., Peng, C., Lu, Z., Luo, X., & Xue, D. (2021). Microstructure and defect characteristics of lithium niobate with different Li concentrations. Inorganic Chemistry Frontiers, 8(17), 4006-4013.
- Han, H., Cai, L., & Hu, H. (2015). Optical and structural properties of single-crystal lithium niobate thin film. Optical Materials, 42, 47-51.
- Fontana, M. D., & Bourson, P. (2015). Microstructure and defects probed by Raman spectroscopy in lithium niobate crystals and devices. Applied Physics Reviews, 2(4).
- Zhu, D., Shao, L., Yu, M., Cheng, R., Desiatov, B., Xin, C. J., ... & Lončar, M. (2021). Integrated photonics on thin-film lithium niobate. Advances in Optics and Photonics, 13(2), 242-352.
I hope you find these articles helpful. Best regards.
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