If you can utilize dry etching, CHF3 + Ar or O2 gases are used for etching MoS2, WSe2. The same recipe can also be used to etch SiO2, so it will not be selective to SiO2. It will very slowly etch Si. For wet etching, refer to these:
1. https://www.researchgate.net/post/what_Etchants_can_be_used_for_MoS2
2. Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition: http://pubs.rsc.org/en/content/articlelanding/2014/nr/c4nr03817g/
Depending on the substrate ― not mentioned in the enunciate ― you could perhaps consider to etch the mentioned S―Se―Te thin-film with a suitable strong mineral acid oxidizing solution; such as: (i) Piranha solution (98 wt% H2SO4 + 30 wt% H2O2; 3:1 v/v; freshly prepared); (ii) chromic acid or chromosulfuric acid; (iii) or with the CP-4 etch solution: HF (conc.) + HNO3 (conc.) + CH3COOH (glacial acetic acid) + Br2 (30:50:30:0.6, volumetric). The same would also apply just for tellurium; which is highly corrosion resistant. Without this element, milder etchants could be (also) considered. All three elements are chalcogens; this justifies why this kind of tellurium etchants can be generally expected to etch also selenium and sulfur, and hence S―Se―Te solid solutions or stoichiometric compounds.
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