The basic formula for calculating built-in potential is:
Vbi = VT ln(NAND/ni2)
But in SILVACO software and some research papers the formula used for finding built-in potential is:
Vbi = VT ln(NS/D/ni)
Can someone explain which of these two are correct and how?
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1217247&newsearch=true&queryText=physical%20short%20channel%20threshold%20voltage%20model%20for%20undoped%20symmetric%20dg%20mos&fname=&mname=&lname=&title=&volume=&issue=&spage=
As per my knowledge there is no specific formula available in silvaco for calculating the built in voltage. You can simply determine by drawing a cutline across the junction.
If we use cutline then we will see the value of built-in potential, there is no doubt in that. But if we try find the value of built-in potential using the first formula and the value we used in describing our device in the silvaco then the calculated value and value found using cutline do not match.
They will not match because derived formula has some assumptions always.
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