Dear Nudrat Sufiyan,

Please check and try attached .in file in DeckBuild environment in SILVACO ATLAS TCAD. This code consists of 2 HEMT structures which you could find in related literature. The first structure is a conventional AlGaN/GaN HEMT structure. The second one is recessed Gate HEMT. Also, you could probably find and study the HEMT device characteristics after running the codes for instance drain current, impact generation rate, Cgs, Cgd, current density, Unilateral power gain (dB), electric field, etc. Moreover, there is an opportunity to modify the codes according to your case study.

I hope the simulation code could come in handy for your case study.

Good luck with your work!

Best wishes,

Daniyal

Thankyou , when I ran this code in deckbuild environment , It is showing error :"Invalid parameter specification"

Dear Nudrat Sufiyan ,

thank you for your message.

Could you please elaborate on your issue with error "Invalid parameter specification"?

I have attached a 10 min video regarding HEMT (recessed gate and conventional AlGaN/GaN HEMT) simulation code running on Deckbuild SILVACO ATLAS. There is no issue with "AlGaN_GaN_HEMT.in" SILVACO code.

You should study this code and related literature plus papers to get some parameters (impact material=GaN selb an1=2.9e8 an2=2.9e8 bn1=3.4e7 bn2=3.4e7 ap1=2.9e8 ap2=2.9e8 bp1=3.4e7 bp2=3.4e7) according to your case study and your reference paper!

The video is attached below.

Good luck with your work!

Best wishes,

Daniyal

Thankyou very much sir. It is really helpful.

For this structure you can write code as follows. First define the mesh according to required structure

# x plane meshing

x.m l=0.0 s=0.01

x.m l=0.1 s=0.01

x.m l=0.2 s=0.1

x.m l=0.3 s=0.01

x.m l=0.4 s=0.1

x.m l=0.5 s=0.01

x.m l=0.6 s=0.1

# y plane meshing

y.m l=0.0 s=0.01

y.m l=0.01 s=0.01

y.m l=0.02 s=0.01

y.m l=0.03 s=0.01

y.m l=0.05 s=0.001

y.m l=0.052 s=0.001

y.m l=0.053 s=0.001

y.m l=0.1 s=0.01

y.m l=0.15 s=0.01

region num=1 material=Air

region num=2 x.min=0.1 x.max=0.5 y.min=0.03 y.max=0.052 mat=AlGaN x.comp=0.23

region num=3 x.min=0.1 x.max=0.5 y.min=0.052 y.max=0.053 mat=AlN

region num=4 x.min=0 x.max=0.6 y.min=0.053 y.max=0.1 mat=GaN

region num=5 x.min=0 x.max=0.6 y.min=0.1 y.max=0.15 mat=Si substrate

elec num=1 name=source x.min=0 x.max=0.1 y.min=0.01 y.max=0.053

elec num=2 name=gate x.min=0.2 x.max=0.3 y.min=0.0 y.max=0.03

elec num=3 name=drain x.min=0.5 x.max=0.6 y.min=0.01 y.max=0.053

elec num=4 substrate

contact name=gate workfunction=5.15

contact name=source workfunction=4

contact name=drain workfunction=4