Most all literature discusses a-Si:H films on glass/other substrates. I am interested in any work that may have been done in developing these films on (100) c-Si substrates. I have found one paper that discussed using (111) c-Si, and I am curious if there is a fundamental limitation for (100) substrates.
This group deposited a-Si on crystalline Si: search Dr.Andrey Kosarev, INAOE, Mexico.
Hi Stan, one thing that you should consider for (100) a-Si substrates is that in some regimens you can obtain epitaxial growth. However, I have worked with deposition of a-Si:H, um-Si:H, epi-Si:H on (100) substrate, and there is not fundamental limitation, but crystallographic structure of the substrate will influence on the structure of the thin film. Also, this will depend on the deposition parameters. Selection of the substrate sometimes is related to the type of characterization and application of the thin film.
Regards
More information about epitaxy growth:
https://hal-polytechnique.archives-ouvertes.fr/hal-00855489/document
At elevated temperature PECVD with silane (SiH4) will do it. More recent work has plasma free conditions using higher polysilanes. See the link: https://www.gelest.com/themencode-pdf-viewer/?file=https://www.gelest.com/wp-content/uploads/Synthesis_Exploratory_Deposition_Studies_Isotetrasilane_Reactive-Intermediates_Epitaxial_Silicon.pdf
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